900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






MOS-TECH

MT3401A Datasheet Preview

MT3401A Datasheet

P-Channel Power MOSFET

No Preview Available !

MOS-TECH Semiconductor Co.,LTD
茂鈿半導體股份有限公司
P-Channel Enhancement Mode Field Effect Transistor
MT3401A
Product Summary
VDS= -30V
ID= -4.2A (VGS= -10V)
≦ ΩRDS(ON) 60m @VGS= -10V
≦ ΩRDS(ON) 75m @VGS= -4.5V
≦ ΩRDS(ON) 120m @VGS= -2.5V
Applications
▪ Power Management in Notebook Computer
▪ Portable Equipment and Battery Powered Systems
Features
Advanced Trench Process Technology.
High Density Cell Design for Ultra Low
On-Resistance.
Lead free product is acquired.
RoHS Compliant.
SOT-23-3L Package.
Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID
IDM
IS
PD
TJ, TSTG
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Maximum Power Dissipation 1
Operating Junction and Storage Temperature Range
Notes:
1. Surface Mounted on 1” x 1” FR4 Board, t 10 Sec.
2. Pulse width limited by maximum junction temperature.
Rev2.0 May-2-2012
Steady State
-30
±12
-4.2
-30
-2
1.25
-55 to 150
Units
V
V
A
A
A
W
www.mtsemi.com
Page 1 of 6




MOS-TECH

MT3401A Datasheet Preview

MT3401A Datasheet

P-Channel Power MOSFET

No Preview Available !

MOS-TECH Semiconductor Co.,LTD
茂鈿半導體股份有限公司
MT3401A
Thermal Resistance Ratings
Symbol
Parameter
RthJA
Maximum Junction-to-Ambient
RthJF
Maximum Junction-to-Foot (Drain)
t 10 Sec
Steady State
Steady State
Typical
65
85
43
Maximum
90
125
60
Unit
/W
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Parameter
Test Condition
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS= 0V, ID= -250µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = -250µA
IGSS Gate-Body Leakage Current
VDS = 0V, VGS = ±12V
IDSS Zero Gate Voltage Drain Current
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 85
RDS(on) Drain Source On State Resistance a
VGS = -10V, ID = -4.2A
VGS = -4.5V, ID = -4A
gfs Forward Transconductance a
VSD Diode Forward Voltage a
Dynamic Characteristics b
VGS = -2.5V, ID = -1A
VDS = -5V, ID = -5A
IS = -1A, VGS = 0V
Ciss Input Capacitance
Coss Output Capacitance
VDS= -15V, VGS=0V, f=1MHz
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = -15V, VGS = -4.5V, ID = -2.5A
Qgd Gate-Drain Charge
td(on)
Turn-On Delay Time
tr Rise Time
VDD = -15V, RL = 15Ω
Td(off)
Turn-Off Delay Time
ID= -1.0A, VGEN = -10V, RG = 6Ω
tf Fall Time
Rg Gate Resistance
VGS=0, VDS=0, f=1MHz
trr Body Diode Reverse Recovery Time
IF = -4A, di/dt = 100A/µs
Qrr Body Diode Reverse Recovery Charge
Note:
≦ ≦a. Pulse test; pulse width 300µs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
-30 -
-V
-0.7 -1 -1.5 V
- - ±100 nA
- - -1
µA
- - -30
- 55 60
- 65 75 mΩ
- - 120
7 11 - S
-
-0.77
-1
V
- 720 -
- 90 - pF
- 65 -
- 11.5 14
- 1.56 - nC
- 2.2 -
- 8.3 12
- 7.6 15
nSec
- 26 46
- 5.6 10
- 8 -Ω
- 11 - nSec
- 6 - nC
Rev2.0 May-2-2012
www.mtsemi.com
Page 2 of 6


Part Number MT3401A
Description P-Channel Power MOSFET
Maker MOS-TECH
Total Page 6 Pages
PDF Download

MT3401A Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 MT3401 P-Channel Power MOSFET
MOS-TECH
2 MT34013 EIGHT CHANNEL ARINC DECODER
Aeroflex Circuit Technology
3 MT3401A P-Channel Power MOSFET
MOS-TECH





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy