MT3710 mosfet equivalent, n-channel powe mosfet.
* RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A
* Fast switching speed
* Low gate charge
* High performance trench technology for extremely low RDS(on)
This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
* DC to DC convertors.
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