MT4966 mosfet equivalent, dual n-channel powe mosfet.
* Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A
* Max rDS(on) = 106 mΩ at VGS = 6 V, ID = 2.1 A
* High performance trench technology for extremely low rDS(on.
* Synchronous Rectifier
* Primary Switch For Bridge Topology
D2 D1 D1
D2
Pin 1
G2
S2 G1 S1
SO-8
D2 5 D2 6 .
This N-Channel MOSFET is produced using MOS-TECH Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and
ruggedness.
Applications
* Synchronous Rectifier
* Primary Switch For Bridge Topolo.
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