MT4966 Datasheet Dual N-Channel Powe MOSFET

Manufacturer: MOS-TECH

Download the MT4966 datasheet PDF. This datasheet also includes the MT4966-MOS variant, as both parts are published together in a single manufacturer document.

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MT4966 dual n-channel powe mosfet by MOS-TECH - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MT4966-MOS-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MT4966
Manufacturer	MOS-TECH
File Size	538.07 KB
Description	Dual N-Channel Powe MOSFET
Download	MT4966 Download (PDF)

General Description

This N-Channel MOSFET is produced using MOS-TECH Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

Applications Synchronous Rectifier Primary Switch For Bridge Topology D2 D1 D1 D2 Pin 1 G2 S2 G1 S1 SO-8 D2 5 D2 6 D1 7 D1 8 Q2 Q1 4 G2 3 S2 2 G1 1 S1 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Po

Overview

MOS-TECH Semiconductor Co.,LTD MT4966 Dual N-Channel Powe MOSFET 100 V, 4.

Key Features

Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A.
Max rDS(on) = 106 mΩ at VGS = 6 V, ID = 2.1 A.
High performance trench technology for extremely low rDS(on).
High power and current handling capability in a widely used surface mount package.
100% UIL Tested.
RoHS Compliant General.

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