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MT4976 - 60V Power MOSFET

Download the MT4976 datasheet PDF. This datasheet also covers the MT4976-MOS variant, as both devices belong to the same 60v power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This complementary MOSFET device is produced using Mos-tech’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

DC/DC converter Power management

Key Features

  • Q1: N-Channel 4.5 A, 60 V RDS(on) = 40 mΩ @ VGS = 10V RDS(on) = 45 mΩ @ VGS = 4.5V.
  • Q2: P-Channel.
  • 3.5 A,.
  • 60 V RDS(on) = 70 mΩ @ VGS =.
  • 10V RDS(on) = 81 mΩ @ VGS =.
  • 4.5V.
  • RoHS Compliant DD1DD2DD2 DD1 SO-8 Pin 1 SO-8 SS1GS1SS2GG2 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dua.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT4976-MOS-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT4976
Manufacturer MOS-TECH
File Size 535.44 KB
Description 60V Power MOSFET
Datasheet download datasheet MT4976 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOS-TECH Semiconductor Co.,LTD MT4976 60V Complementary Power MOSFET General Description This complementary MOSFET device is produced using Mos-tech’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications • DC/DC converter • Power management • LCD backlight inverter Features • Q1: N-Channel 4.5 A, 60 V RDS(on) = 40 mΩ @ VGS = 10V RDS(on) = 45 mΩ @ VGS = 4.5V • Q2: P-Channel –3.5 A, –60 V RDS(on) = 70 mΩ @ VGS = –10V RDS(on) = 81 mΩ @ VGS = –4.