MT4966
MT4966 is manufactured by MOS-TECH.
MOS-TECH Semiconductor Co.,LTD
Dual N-Channel Powe MOSFET
100 V, 4.7 A, 102 mΩ
Features
- Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A
- Max rDS(on) = 106 mΩ at VGS = 6 V, ID = 2.1 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- RoHS pliant
General Description
This N-Channel MOSFET is produced using MOS-TECH Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications
- Synchronous Rectifier
- Primary Switch For Bridge Topology
D2 D1 D1
D2
Pin 1
G2
S2 G1 S1
SO-8
D2 5 D2 6 D1 7...
