MT4966 Overview
This N-Channel MOSFET is produced using MOS-TECH Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
MT4966 Key Features
- Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A
- Max rDS(on) = 106 mΩ at VGS = 6 V, ID = 2.1 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used
- 100% UIL Tested
- RoHS pliant