Datasheet4U Logo Datasheet4U.com

MT4966 - Dual N-Channel Powe MOSFET

Download the MT4966 datasheet PDF. This datasheet also covers the MT4966-MOS variant, as both devices belong to the same dual n-channel powe mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

ruggedness.

Synchronous Rectifier Primary Switch For Bridge Topology D2 D1 D1 D2 Pin 1 G2 S2 G1 S1 SO-8

Key Features

  • Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A.
  • Max rDS(on) = 106 mΩ at VGS = 6 V, ID = 2.1 A.
  • High performance trench technology for extremely low rDS(on).
  • High power and current handling capability in a widely used surface mount package.
  • 100% UIL Tested.
  • RoHS Compliant General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT4966-MOS-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT4966
Manufacturer MOS-TECH
File Size 538.07 KB
Description Dual N-Channel Powe MOSFET
Datasheet download datasheet MT4966 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MT4903 P-Channel MOSFET MT Semiconductor
MT4953 Dual P-Channel High Density Trench MOSFET matrix microtech
MT4953 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ETC
MT4953 P-Channel MOSFET MT Semiconductor
MT4953A Dual 30 P-Channel Power MOSFET MOS TECH

Other Datasheets by MOS-TECH

Part Number Description
MT4914 Dual N-Channel Power MOSFET
MT4936 N-Channel Power MOSFET
MT4946 N-Channel Power MOSFET
MT4976 60V Power MOSFET
MT4407 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOS-TECH Semiconductor Co.,LTD MT4966 Dual N-Channel Powe MOSFET 100 V, 4.7 A, 102 mΩ Features „ Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A „ Max rDS(on) = 106 mΩ at VGS = 6 V, ID = 2.1 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using MOS-TECH Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.