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MT4966 Datasheet Dual N-channel Powe MOSFET

Manufacturer: MOS-TECH

Overview: MOS-TECH Semiconductor Co.,LTD MT4966 Dual N-Channel Powe MOSFET 100 V, 4.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This N-Channel MOSFET is produced using MOS-TECH Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

Applications „ Synchronous Rectifier „ Primary Switch For Bridge Topology D2 D1 D1 D2 Pin 1 G2 S2 G1 S1 SO-8 D2 5 D2 6 D1 7 D1 8 Q2 Q1 4 G2 3 S2 2 G1 1 S1 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Po

Key Features

  • Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A.
  • Max rDS(on) = 106 mΩ at VGS = 6 V, ID = 2.1 A.
  • High performance trench technology for extremely low rDS(on).
  • High power and current handling capability in a widely used surface mount package.
  • 100% UIL Tested.
  • RoHS Compliant General.

More Datasheets from MOS-TECH

Part Number Description
MT4914 Dual N-Channel Power MOSFET
MT4936 N-Channel Power MOSFET
MT4946 N-Channel Power MOSFET
MT4976 60V Power MOSFET
MT4407 P-Channel MOSFET
MT4408L N-Channel Power MOSFET
MT4409 P-Channel Power MOSFET
MT4410 N-Channel Power MOSFET
MT4420 N-Channel Power MOSFET
MT4435 30V P-Channel PowerTrench MOSFET

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