MT4407 Datasheet PDF

MOS-TECH MT4407

This P-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Part No.	MT4407
Datasheet	MT4407 Download
Manufacturer	MOS-TECH
Description	P-Channel MOSFET
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GENERAL DESCRIPTION

July 2010

FEATURES

Max rDS(on) = 13m: VGS = -10V, ID = -12A Max rDS(on) = 20m: VGS = -4.5V, ID = -12A Extended VGS range (-25V) for battery applications High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant D D D D 54 63 SO-8 G SS S 7 8 2 1 MOSFET

MAXIMUM RATINGS

TA = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current -Continuous (Note1a) ID -Pulsed Power Dissipation for Single Operation PD (Note1a)