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MT4407 - P-Channel MOSFET

Download the MT4407 datasheet PDF. This datasheet also covers the MT4407-MOS variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This P-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance.

Key Features

  • Max rDS(on) = 13m:VGS = -10V, ID = -12A.
  • Max rDS(on) = 20m:VGS = -4.5V, ID = -12A.
  • Extended VGS range (-25V) for battery.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT4407-MOS-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT4407
Manufacturer MOS-TECH
File Size 966.48 KB
Description P-Channel MOSFET
Datasheet download datasheet MT4407 Datasheet

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Other Datasheets by MOS-TECH

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOS-TECH Semiconductor Co.,LTD MT4407 P-Channel MOSFET -30V, -12A, 13m: General Description This P-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. July 2010 Features „ Max rDS(on) = 13m:VGS = -10V, ID = -12A „ Max rDS(on) = 20m:VGS = -4.