MT4407 Description
This P-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
MT4407 Key Features
- Max rDS(on) = 13m:VGS = -10V, ID = -12A
- Max rDS(on) = 20m:VGS = -4.5V, ID = -12A
- Extended VGS range (-25V) for battery