Datasheet Summary
MOS-TECH Semiconductor Co.,LTD
MT4407 P-Channel MOSFET
-30V, -12A, 13m:
General Description
This P-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
July 2010
Features
- Max rDS(on) = 13m:VGS = -10V, ID = -12A
- Max rDS(on) = 20m:VGS = -4.5V, ID = -12A
- Extended VGS range (-25V) for battery applications
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- RoHS pliant
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