Datasheet Summary
MOS-TECH Semiconductor Co.,LTD
0D 200
07 N-Channel
PowerTrench®
MOSFET
30V, 15A, 6.8mΩ
Features
- rDS(on) = 6.8mΩ, VGS = 10V, ID = 15A
- rDS(on) = 9.3mΩ, VGS = 4.5V, ID = 14A
- High performance trench technology for extremely low rDS(on)
- Low gate charge
- High power and current handling capability
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications
- DC/DC converters
- RoHS pliant
Branding Dash
1 2 3 4
SO-8
54 63 72 81
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