Datasheet Summary
MOS-TECH Semiconductor Co.,LTD
07 P-Channel Power0OSFET
-30V, -13A, mΩ
General Description
Features
This P-Channel MOSFET is producted using0RVWHFK Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
- Max rDS(on) = mΩ at VGS = -10V, ID = -13A
- Max rDS(on) = 1mΩ at VGS = -4.5V, ID = -11A
- Extended VGS range (-25V) for battery applications
- HBM ESD protection level of kV typical (note 3)
- High performance trench technology for extremely low rDS(on)
- High power and...