MPQ1918GQE-AEC1 datasheet, driver equivalent, MPS

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MPQ1918GQE-AEC1 Datasheet

Features and benefits

independent high-side (HS) and low-side (LS) pulse-width modulation (PWM) inputs. It also provides a bootstrap technique for the HS driver voltage, and can operate up to .

Application

* Half-Bridge and Full-Bridge Converters
* Audio Class-D Amplifiers
* Synchronous Buck Converters
* Powe.

Description

The MPQ1918 is designed to drive enhancement mode Gallium Nitride (GaN) FETs or N-channel MOSFETs with a low gate threshold voltage in a half-bridge or synchronous application. The MPQ1918 features independent high-side (HS) and low-side (LS) pulse-w.

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