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MT Semiconductor

MT4607 Datasheet Preview

MT4607 Datasheet

Dual N & P-Channel PowerTrench MOSFET

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MOS-TECH Semiconductor Co.,LTD
MT4607
30V Complementary Power MOSFET
General Description
This complementary MOSFET device is produced using
Mos-tech’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC converter
Power management
Features
Q1: N-Channel
7 A, 30 V
RDS(on) = 28 m@ VGS = 10V
RDS(on) = 40 m@ VGS = 4.5V
Q2: P-Channel
–7 A, –30 V
RDS(on) = 25 m@ VGS = –10V
RDS(on) = 36 m@ VGS = –4.5V
DD1DD2DD2
DD1
SO-8
Pin 1 SO-8
SS1GS1SS2GG2
Q2
5
6
Q1
7
8
4
3
2
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
MT4607
MT4607
13”
Q1 Q2
30 –30
±20 ±20
7 –7
20 –20
2
1.6
1.2
1
–55 to +175
Units
V
V
A
W
°C
78 °C/W
40 °C/W
Tape width
12mm
Quantity
2500 units
2011 MOS-TECH Semiconductor Corporation
MT4607 Rev A




MT Semiconductor

MT4607 Datasheet Preview

MT4607 Datasheet

Dual N & P-Channel PowerTrench MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
BVDSS
TJ
Breakdown Voltage
Temperature Coefficient
IDSS Zero Gate Voltage Drain
Current
IGSS Gate-Body Leakage
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VDS = –24 V, VGS = 0 V
VGS = +20 V, VDS = 0 V
VGS = +20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on) On-State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VDS = VGS, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VGS = 10 V, ID = 7 A
VGS = 10 V, ID = 7A, TJ = 125°C
VGS = 4.5 V, ID = 5 A
VGS = –10 V, ID = –7 A
VGS = –10 V, ID = –7 A, TJ = 125°C
VGS = –4.5 V, ID = –5 A
VGS = 10 V, VDS = 5 V
VGS = –10 V, VDS = –5 V
VDS = 15 V, ID = 7 A
VDS = –10 V, ID = –7 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer
Capacitance
Q1
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Q2
VDS = –15 V, VGS = 0 V,
f = 1.0 MHz
Type Min Typ Max Units
Q1 30
Q2 –30
V
Q1 23 mV/°C
Q2 –21
Q1 1 µA
Q2 –1
Q1 +100 nA
Q2 +100
Q1 1 1.6 3 V
Q2 –1 –1.5 –3
Q1 –4 mV/°C
Q2 4
Q1 21 28 m
32 42
27 40
Q2 21 25
29 51
32 36
Q1 20
Q2 –20
A
Q1 18 S
Q2 16
Q1 830 pF
Q2 1540
Q1 185 pF
Q2 400
Q1 80 pF
Q2 170
Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
(Note 2)
Q1
VDS = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Q2
VDS = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Q1
VDS = 15 V, ID = 7.5 A, VGS = 5 V
Q2
VDS = –10 V, ID = –6 A, VGS = –5V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
6 12
13 24
10 18
22 35
18 29
47 75
5 12
18 30
9 13
15 20
2.8
4
3.1
5
ns
ns
ns
ns
nC
nC
nC


Part Number MT4607
Description Dual N & P-Channel PowerTrench MOSFET
Maker MT Semiconductor
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MT4607 Datasheet PDF





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