• Part: MBQ25T120FESC
  • Manufacturer: MagnaChip
  • Size: 1.39 MB
Download MBQ25T120FESC Datasheet PDF
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MBQ25T120FESC Key Features

  • High Speed Switching & Low VCE(sat) Loss
  • VCE(sat) = 2.0V @IC = 25A
  • High Input Impedance
  • trr = 100ns (typ.) @ diF/dt = 500A/ μs
  • Maximum junction temperature 175°C
  • Pb-free ; RoHS pliant
  • Ultra Soft, fast recovery anti-parallel diode
  • Ultra Narrowed VF distribution control
  • Positive Temperature coefficient for easy paralleling

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MBQ25T120FESC Description

This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & PV inverter and Welder Applications. Applications PFC UPS Welder PV Inverter.