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MBQ25T120FESC - IGBT

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Datasheet Details

Part number MBQ25T120FESC
Manufacturer MagnaChip
File Size 1.39 MB
Description IGBT
Datasheet download datasheet MBQ25T120FESC Datasheet

General Description

This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality.

This device is for PFC, UPS & PV inverter and Welder Applications.

Applications  PFC  UPS  Welder  PV Inverter

Overview

MBQ25T120FESC 1200V Fieldstop Trench IGBT MBQ25T120FESC High speed Fieldstop Trench IGBT.

Key Features

  • High Speed Switching & Low VCE(sat) Loss.
  • VCE(sat) = 2.0V @IC = 25A.
  • High Input Impedance.
  • trr = 100ns (typ. ) @ diF/dt = 500A/ μs.
  • Maximum junction temperature 175°C.
  • Pb-free ; RoHS compliant.
  • Ultra Soft, fast recovery anti-parallel diode.
  • Ultra Narrowed VF distribution control.
  • Positive Temperature coefficient for easy paralleling TO-247 G C E Maximum Rating Parameter Collector-emitter voltage DC collector current, limited by Tvjmax TC=25°C T.

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