MBQ50T65FESC Key Features
- High Speed Switching & Low Power Loss
- VCE(sat) = 1.85V @ IC = 50A
- Eoff = 0.55mJ @ TC = 25°C
- High Input Impedance
- trr = 80ns (typ.) @diF/dt = 1000A/ μs
- Maximum junction temperature 175°C
- Part: MBQ50T65FESC
- Manufacturer: MagnaChip
- Size: 782.67 KB
Related MagnaChip Datasheets
| Part Number | Description |
|---|---|
| MBQ25T120FESC | IGBT |
| MBQ40T120FDS | High speed FieldStop Trench IGBT |
| MBQ40T120FES | High speed FieldStop Trench IGBT |
| MBQ40T120QESTH | IGBT |
| MBQ40T65FDSC | 650V Field Stop IGBT |
MBQ50T65FESC Description
This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications. TO-247 MBQ50T65FESC 650V Field Stop IGBT.