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MBQ60T65PES - High Speed Fieldstop Trench IGBT

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Datasheet Details

Part number MBQ60T65PES
Manufacturer MagnaChip
File Size 729.89 KB
Description High Speed Fieldstop Trench IGBT
Datasheet download datasheet MBQ60T65PES Datasheet

General Description

This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT 2nd Generation Technology, which is not only the highest efficiency capable of switching behavior, but also it is high ruggedness and excellent quality for solar inverter, UPS, IH, welder and PFC application where low conduction losses are essential

Overview

MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation.

Key Features

  • High Speed Switching & Low Power Loss.
  • VCE(sat) = 1.85V @ IC = 60A.
  • Eoff = 0.53mJ @ TC = 25°C.
  • High Input Impedance.
  • trr = 110ns (typ. ) @diF/dt = 500A/ μs.
  • Maximum Junction Temperature 175°C.

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