MBQ60T65PES Key Features
- High Speed Switching & Low Power Loss
- VCE(sat) = 1.85V @ IC = 60A
- Eoff = 0.53mJ @ TC = 25°C
- High Input Impedance
- trr = 110ns (typ.) @diF/dt = 500A/ μs
- Maximum Junction Temperature 175°C
- Part: MBQ60T65PES
- Manufacturer: MagnaChip
- Size: 729.89 KB
Related MagnaChip Datasheets
| Part Number | Description |
|---|---|
| MBQ25T120FESC | IGBT |
| MBQ40T120FDS | High speed FieldStop Trench IGBT |
| MBQ40T120FES | High speed FieldStop Trench IGBT |
| MBQ40T120QESTH | IGBT |
| MBQ40T65FDSC | 650V Field Stop IGBT |
MBQ60T65PES Description
This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT 2nd Generation Technology, which is not only the highest efficiency capable of switching behavior, but also it is high ruggedness and excellent quality for solar inverter, UPS, IH, welder and PFC application where low conduction losses are essential.