Description
The MDU06N110 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 60V ID = 52A @VGS = 10V RDS(ON)
< 11.0 mΩ @VGS = 10V 100% UIL Tested
DD DD
DD DD
D
S SSG
GS SS
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2)
TC=25oC TC=100oC
TC=25oC TC=100oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junct.
MDU06N110-MagnaChip.pdf
