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MDV1525 Datasheet Preview

MDV1525 Datasheet

Single N-channel MOSFET

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MDV1525
Single N-channel Trench MOSFET 30V, 24A, 10.1mΩ
General Description
The MDV1525 uses advanced MagnaChips MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDV1525 is suitable for DC/DC converter and
general purpose applications.
Features
VDS = 30V
ID = 24A @VGS = 10V
RDS(ON)
< 10.1m@VGS = 10V
< 14.0m@VGS = 4.5V
100% UIL Tested
100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PDFN33
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC (Silicon limited)
TC=25oC (Package limited)
TC=70oC
TA=25oC
TA=70oC
TC=25oC
TC=70oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
May. 2011. Version1.2
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
37.2
24
24
13.8(3)
11.1(3)
60
24.5
15.6
3.4(3)
2.2(3)
48
-55~150
Unit
V
V
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
36
5.1
Unit
oC/W
MagnaChip Semiconductor Ltd.




MagnaChip

MDV1525 Datasheet Preview

MDV1525 Datasheet

Single N-channel MOSFET

No Preview Available !

Ordering Information
Part Number
MDV1525URH
Temp. Range
-55~150oC
Package
PowerDFN33
Packing
Tape & Reel
Quantity
5000 units
Rohs Status
Halogen Free
Electrical Characteristics (TJ = 25oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
gfs
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
Rg
VSD
trr
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
TJ=55oC
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 11A
TJ=125oC
VGS = 4.5V, ID = 9A
VDS = 5V, ID = 11A
VDS = 15.0V, ID = 11A,
VGS = 10V
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
VGS = 10V, VDS = 15.0V,
ID = 11A, RG = 3.0Ω
f=1 MHz
IS = 11A, VGS = 0V
IF = 11A, dl/dt = 100A/µs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. EAS is tested at starting Tj = 25, L = 0.1mH, IAS = 16.8A, VDD = 27V, VGS = 10V
3. T < 10sec.
Min Typ
Max Unit
30 -
1.3 1.9
-
2.7
V
-- 1
- - 5 µA
- - ±0.1
- 8.2 10.1
-
11.9
14.6
mΩ
- 11.5 14.0
- 27.3
-
S
8.8 12.6 16.4
4.2 6.0
7.8
nC
- 2.5
-
- 1.8
-
568 811 1054
54 77 100 pF
108 154
200
- 6.8
-
- 11.8
- 20.0
-
-
ns
- 7.1
-
1.0 1.6 3.0 Ω
- 0.83 1.1
V
-
22.2 33.3
ns
-
13.8 20.7
nC
May. 2011. Version1.2
2 MagnaChip Semiconductor Ltd.


Part Number MDV1525
Description Single N-channel MOSFET
Maker MagnaChip
PDF Download

MDV1525 Datasheet PDF






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