Description
The MDV1529E uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 32V ID = 28A @VGS = 10V RDS(ON)
< 4.5mΩ @VGS = 10V < 6.5mΩ @VGS = 4.5V
DD DD
DD DD
D
S SSG
GS SS
PDFN33
G S
Absolute Maximum Ratings (Ta = 25oC unless otherwise specified)
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (1)
Characteristics
Pulsed Drain Current
Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25oC (Silicon limited) TC=25oC (Package limited) TC=70oC
TC=25oC TC=70oC
Symbol VDSS VGSS
ID
IDM PD EA.
MDV1529E-MagnaChip.pdf
