Datasheet Summary
MMD65R380Q Datasheet
650V 0.38Ω N-channel MOSFET
- Description
MMD65R380Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss.
- Key Parameters
Parameter VDS @ Tj, max
RDS(on),max VGS(th), typ
ID Qg, typ
Value 700 0.38
3 10.6 20.6
Unit V Ω V A nC
- Package & Internal Circuit
- Features
- Low power loss by high speed switching and low on-resistance
- 100% avalanche tested
- Green package
- Pb-free...