SLB5N65S Datasheet - Maple Semiconductor

N-Channel MOSFET

SLB5N65S Features

* - 4.5A, 650V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 13.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GS D D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB5N65S SLI5N65S VDS

SLB5N65S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLB5N65S Datasheet (479.25 KB)

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Datasheet Details

Part number:

SLB5N65S

Manufacturer:

Maple Semiconductor

File Size:

479.25 KB

Description:

N-channel mosfet.

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SLB5N65S N-Channel MOSFET Maple Semiconductor

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SLB5N65S Features

SLB5N65S General Description

Datasheet Details

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