SLB80R600SJ mosfet equivalent, n-channel mosfet.
-10A, 800V, RDS(on) typ.= 0.55Ω@VGS = 10 V
- Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
35nC)
DD.
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced Super-Junction This advanced technology
theacsh--nbL7oo.e6wlAeo,gng5ay0tee0. Vsch,paRerDgcSe(oi(na)ttylylppy. i=cat0al .5i2lΩo5n@rCeV)dGS
=
10
V
to minimize conduction loss, pr-o.
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