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SLD830C - N-Channel MOSFET

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Datasheet Details

Part number SLD830C
Manufacturer Maple Semiconductor
File Size 306.07 KB
Description N-Channel MOSFET
Datasheet download datasheet SLD830C Datasheet

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for low voltage applications such as DC/DC converters and high efficiency switching for power management in portable and battery operated products.

Overview

SLD830C / SLU830C SLD830C/SLU830C 500V N-Channel MOSFET General.

Key Features

  • - 4.0A, 500V, RDS(on) = 1.5Ω@VGS = 10 V - Low gate charge ( typical 20nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note.

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