SLP60R850SJ - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

Part number	SLP60R850SJ
Manufacturer	Maple Semiconductor
File Size	1.14 MB
Description	N-Channel MOSFET
Datasheet	SLP60R850SJ Datasheet

General Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency.

Overview

SLP60R850SJ / SLF60R850SJ SLP60R850SJ / SLF60R850SJ 600V N-Channel MOSFET CB-FET.

Key Features

- 5A, 600V, RDS(on) typ. = 0.77Ω@VGS = 10 V - Low gate charge ( typical 15nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP60R850SJ SLF60R850SJ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed Gate-Source Voltage Single P.

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