ME10N15-G mosfet equivalent, n-channel mosfet.
* RDS(ON)≦345mΩ@VGS=10V
* RDS(ON)≦365mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC cur.
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
PIN CONFIGURATIO.
The ME10N15 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suit.
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