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ME10N15-G - N-Channel MOSFET

This page provides the datasheet information for the ME10N15-G, a member of the ME10N15 N-Channel MOSFET family.

Description

The ME10N15 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

Features

  • RDS(ON)≦345mΩ@VGS=10V.
  • RDS(ON)≦365mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME10N15-G

Datasheet Details

Part number ME10N15-G
Manufacturer Matsuki
File Size 940.32 KB
Description N-Channel MOSFET
Datasheet download datasheet ME10N15-G Datasheet
Additional preview pages of the ME10N15-G datasheet.

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Full PDF Text Transcription

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N-Channel 150-V (D-S) MOSFET ME10N15/ME10N15-G GENERAL DESCRIPTION The ME10N15 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦345mΩ@VGS=10V ● RDS(ON)≦365mΩ@VGS=4.
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