ME15N25F-G Description
The ME15N25F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance.
ME15N25F-G Key Features
- RDS(ON)≦220mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME15N25F-G Applications
- Power Management in Note book