ME20N03 Key Features
- RDS(ON) ≦15mΩ@VGS=10V
- RDS(ON) ≦20mΩ @VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
| Part Number | Description |
|---|---|
| ME20N10 | N-Channel 100V (D-S) MOSFET |
| ME20N10-G | N-Channel 100V (D-S) MOSFET |
| ME20N15 | N-Channel MOSFET |
| ME20N15-G | N-Channel MOSFET |
| ME200N04T | N-Channel MOSFET |