ME20N03 mosfet equivalent, n-channel enhancement mosfet.
* RDS(ON) ≦15mΩ@VGS=10V
* RDS(ON) ≦20mΩ @VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC cu.
* Power Management in Desktop Computer
* Video Graphic Accelerate Card
* Battery Powered System
* DC/DC .
The ME20N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
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