ME20N10-G Datasheet | Matsuki

ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION Features - RDS(ON)≦78mΩ@VGS=10V - RDS(ON)≦98mΩ@VGS=5V - Super high density cell design for extremely low RDS(ON) - Exceptional...