ME200N04T - N-Channel MOSFET

Matsuki

General Description

The ME200N04T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦3.5mΩ@VGS=10V.
RDS(ON)≦4.7mΩ@VGS=5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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ME200N04T n-channel mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	ME200N04T
Manufacturer	Matsuki
File Size	697.86 KB
Description	N-Channel MOSFET
Datasheet	ME200N04T Datasheet

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Full PDF Text Transcription (Reference)

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N- Channel 40V (D-S) MOSFET ME200N04T / ME200N04T-G GENERAL DESCRIPTION The ME200N04T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (TO-220) Top View FEATURES ● RDS(ON)≦3.5mΩ@VGS=10V ● RDS(ON)≦4.