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ME200N04T-G

Manufacturer: Matsuki

ME200N04T-G datasheet by Matsuki.

This datasheet includes multiple variants, all published together in a single manufacturer document.

ME200N04T-G datasheet preview

ME200N04T-G Datasheet Details

Part number ME200N04T-G
Datasheet ME200N04T-G ME200N04T Datasheet (PDF)
File Size 697.86 KB
Manufacturer Matsuki
Description N-Channel MOSFET
ME200N04T-G page 2 ME200N04T-G page 3

ME200N04T-G Overview

The ME200N04T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

ME200N04T-G Key Features

  • RDS(ON)≦3.5mΩ@VGS=10V
  • RDS(ON)≦4.7mΩ@VGS=5V
  • Super high density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current
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ME200N04T-G Distributor

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