Datasheet4U Logo Datasheet4U.com

ME200N04T-G - N-Channel MOSFET

Download the ME200N04T-G datasheet PDF. This datasheet also covers the ME200N04T variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME200N04T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦3.5mΩ@VGS=10V.
  • RDS(ON)≦4.7mΩ@VGS=5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME200N04T-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME200N04T-G
Manufacturer Matsuki
File Size 697.86 KB
Description N-Channel MOSFET
Datasheet download datasheet ME200N04T-G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ME20P03 P-Channel MOSFET VBsemi
ME2-CH2O-16x15 Electrochemical Formaldehyde Sensor Winsen
ME2-CH2O-D16 Electrochemical Formaldehyde Sensor Winsen
ME2-CO-D14-C Electrochemical Carbon Monoxide sensor Winsen
ME2-O2-D20 Electrochemical Oxygen Sensor Winsen

Other Datasheets by Matsuki

Part Number Description
ME200N04T N-Channel MOSFET
ME20N03 N-Channel Enhancement MOSFET
ME20N10 N-Channel 100V (D-S) MOSFET
ME20N10-G N-Channel 100V (D-S) MOSFET
ME20N15 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N- Channel 40V (D-S) MOSFET ME200N04T / ME200N04T-G GENERAL DESCRIPTION The ME200N04T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (TO-220) Top View FEATURES ● RDS(ON)≦3.5mΩ@VGS=10V ● RDS(ON)≦4.