Datasheet Details
| Part number | ME20N03 |
|---|---|
| Manufacturer | Matsuki |
| File Size | 729.32 KB |
| Description | N-Channel Enhancement MOSFET |
| Datasheet | ME20N03-Matsuki.pdf |
|
|
Overview: ME20N03 N-Channel Enhancement MOSFET GENERAL.
| Part number | ME20N03 |
|---|---|
| Manufacturer | Matsuki |
| File Size | 729.32 KB |
| Description | N-Channel Enhancement MOSFET |
| Datasheet | ME20N03-Matsuki.pdf |
|
|
|
The ME20N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
| Part Number | Description |
|---|---|
| ME20N10 | N-Channel 100V (D-S) MOSFET |
| ME20N10-G | N-Channel 100V (D-S) MOSFET |
| ME20N15 | N-Channel MOSFET |
| ME20N15-G | N-Channel MOSFET |
| ME200N04T | N-Channel MOSFET |
| ME200N04T-G | N-Channel MOSFET |
| ME20P03 | P-Channel MOSFET |
| ME20P03-G | P-Channel MOSFET |
| ME20P03F | P-Channel MOSFET |
| ME20P03F-G | P-Channel MOSFET |