ME20N03 Datasheet | Matsuki

N-Channel Enhancement MOSFET GENERAL DESCRIPTION The ME20N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Features - RDS(ON) ≦15mΩ@VGS=10V - RDS(ON) ≦20mΩ @VGS=4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional...