ME20N15 Datasheet | Matsuki

N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION The ME20N15 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-252-3L) Top View ME20N15 / ME20N15-G Features - RDS(ON)≦90mΩ@VGS=10V - RDS(ON)≦110mΩ@VGS=7V - Super high density cell design...