ME20N10-G Key Features
- RDS(ON)≦78mΩ@VGS=10V
- RDS(ON)≦98mΩ@VGS=5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
- Part: ME20N10-G
- Manufacturer: Matsuki
- Size: 528.85 KB
Related Matsuki Datasheets
| Part Number | Description |
|---|---|
| ME20N10 | N-Channel 100V (D-S) MOSFET |
| ME20N15 | N-Channel MOSFET |
| ME20N15-G | N-Channel MOSFET |
| ME20N03 | N-Channel Enhancement MOSFET |
| ME200N04T | N-Channel MOSFET |
ME20N10-G Description
The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits , and low in-line power loss are...
ME20N10-G Applications
- Power Management in Note book