The ME3466-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
| Part number | ME3466-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 875.18 KB |
| Description | N-Channel 150V (D-S) MOSFET |
| Datasheet |
 ME3466-G Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| ME3401 | P-Channel Enhancement-Mode MOSFETs | HAOHAI |
| ME3415 | P-Channel Enhancement-Mode MOSFET | HAOHAI |
| ME3-ETO | Electrochemical Sensor | Winsen |
| ME3-HF | Electrochemical Sensor | Winsen |
| ME3-NO2 | Electrochemical Gas Sensor | Winsen |
| Part Number | Description |
|---|---|
| ME3406 | 600mA Synchronous Step-Down Converter |
| ME3491D | P-Channel 20V (D-S) MOSFET |
| ME3491D-G | P-Channel 20V (D-S) MOSFET |
| ME3205F | N-Channel MOSFET |
| ME3205F-G | N-Channel MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
