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ME3491D-G - P-Channel 20V (D-S) MOSFET

This page provides the datasheet information for the ME3491D-G, a member of the ME3491D P-Channel 20V (D-S) MOSFET family.

Datasheet Summary

Description

The ME3491D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦50mΩ@VGS=-4.5V.
  • RDS(ON)≦65mΩ@VGS=-2.5V.
  • RDS(ON)≦82mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME3491D-G

Datasheet Details

Part number ME3491D-G
Manufacturer Matsuki
File Size 1.06 MB
Description P-Channel 20V (D-S) MOSFET
Datasheet download datasheet ME3491D-G Datasheet
Additional preview pages of the ME3491D-G datasheet.

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Full PDF Text Transcription

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ME3491D/ME3491D-G P-Channel 20V (D-S) MOSFET，ESD Protected GENERAL DESCRIPTION The ME3491D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TSOP-6) Top View FEATURES ● RDS(ON)≦50mΩ@VGS=-4.5V ● RDS(ON)≦65mΩ@VGS=-2.5V ● RDS(ON)≦82mΩ@VGS=-1.
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