Datasheet4U Logo Datasheet4U.com

ME3491D Datasheet P-channel 20v (d-s) MOSFET

Manufacturer: Matsuki

Overview: ME3491D/ME3491D-G P-Channel 20V (D-S) MOSFET，ESD Protected GENERAL.

Datasheet Details

Part number ME3491D
Manufacturer Matsuki
File Size 1.06 MB
Description P-Channel 20V (D-S) MOSFET
Datasheet ME3491D-Matsuki.pdf

General Description

The ME3491D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON)≦50mΩ@VGS=-4.5V.
  • RDS(ON)≦65mΩ@VGS=-2.5V.
  • RDS(ON)≦82mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

More Datasheets from Matsuki

Part Number Description
ME3491D-G P-Channel 20V (D-S) MOSFET
ME3406 600mA Synchronous Step-Down Converter
ME3466-G N-Channel 150V (D-S) MOSFET
ME3205F N-Channel MOSFET
ME3205F-G N-Channel MOSFET
ME3205H-G N-Channel MOSFET
ME3205P N-Channel MOSFET
ME3205P-G N-Channel MOSFET
ME3205T N-Channel MOSFET
ME3205T-G N-Channel MOSFET

ME3491D Distributor