ME3466-G Datasheet | Matsuki

N-Channel 150V(D-S) MOSFET GENERAL DESCRIPTION The ME3466-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook puter power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-26) Top View Features Features - RDS(ON)≦375mΩ@ VGS =10V - RDS(ON)≦400mΩ@ VGS= 6V - Super high density cell design for extremely low RDS(ON) -...