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ME3466-G - N-Channel 150V (D-S) MOSFET

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Description

The ME3466-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number ME3466-G
Manufacturer Matsuki
File Size 875.18 KB
Description N-Channel 150V (D-S) MOSFET
Datasheet download datasheet ME3466-G Datasheet
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N-Channel 150V(D-S) MOSFET GENERAL DESCRIPTION The ME3466-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
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