* RDS(ON)≦14mΩ@VGS=10V
* RDS(ON)≦21mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC curre.

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter PIN CONFIGURATIO.

The ME45N03T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES
* RDS(ON.

ME45N03T-G

ME4542

ME4542-G

ME4542D

ME4542D-G

ME4544

ME4544-G

ME4544D

ME4544D-G

ME4548

ME4548-G

ME4565

ME4565A