ME4953-G Key Features
- RDS(ON)≦60mΩ@VGS=-10V
- RDS(ON)≦90mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Part: ME4953-G
- Manufacturer: Matsuki
- Size: 768.09 KB
Related Matsuki Datasheets
| Part Number | Description |
|---|---|
| ME4953 | Dual P-Channel MOSFET |
| ME4950 | Dual N-Channel MOSFET |
| ME4950-G | Dual N-Channel MOSFET |
| ME4952 | Dual N-Channel MOSFET |
| ME4952-G | Dual N-Channel MOSFET |
ME4953-G Description
The ME4953 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and low in-line power loss are needed in a very small outline...
ME4953-G Applications
- Power Management in Note book