ME4952-G
Overview
The ME4952 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
- RDS(ON)≦270mΩ@VGS=10V
- RDS(ON)≦295mΩ@VGS=6.0V
- RDS(ON)≦350mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
