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ME4952 - Dual N-Channel MOSFET

General Description

The ME4952 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦270mΩ@VGS=10V.
  • RDS(ON)≦295mΩ@VGS=6.0V.
  • RDS(ON)≦350mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME4952
Manufacturer Matsuki
File Size 1.34 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet ME4952 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Dual N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION The ME4952 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4952/ME4952-G FEATURES ● RDS(ON)≦270mΩ@VGS=10V ● RDS(ON)≦295mΩ@VGS=6.0V ● RDS(ON)≦350mΩ@VGS=4.