Datasheet4U Logo Datasheet4U.com

ME60N03-G Datasheet - Matsuki

30V N-Channel Enhancement Mode MOSFET

ME60N03-G Features

* RDS(ON)≦8.5mΩ@VGS=10V

* RDS(ON)≦13mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management

* DC/DC Converter

* LCD TV & Monitor Display inverter

* CCFL invert

ME60N03-G General Description

The ME60N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as .

ME60N03-G Datasheet (944.65 KB)

Preview of ME60N03-G PDF

Datasheet Details

Part number:

ME60N03-G

Manufacturer:

Matsuki

File Size:

944.65 KB

Description:

30v n-channel enhancement mode mosfet.

📁 Related Datasheet

ME60N03 30V N-Channel Enhancement Mode MOSFET (Matsuki)

ME60N03A 25V N-Channel Enhancement Mode MOSFET (Matsuki)

ME60N03AS 25V N-Channel Enhancement Mode MOSFET (Matsuki)

ME60N03S N-Channel MOSFET (Matsuki)

ME60N03S-G N-Channel MOSFET (Matsuki)

ME60N04 N-Channel MOSFET (Matsuki)

ME60N04T N-Channel MOSFET (Matsuki)

ME60N04T-G N-Channel MOSFET (Matsuki)

ME600815 Three-Phase Diode Bridge Modules (150 Amperes/800 Volts) (Powerex Powers)

ME601215 Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts) (Powerex Powers)

TAGS

ME60N03-G 30V N-Channel Enhancement Mode MOSFET Matsuki

Image Gallery

ME60N03-G Datasheet Preview Page 2 ME60N03-G Datasheet Preview Page 3

ME60N03-G Distributor