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ME60N03-G - 30V N-Channel Enhancement Mode MOSFET

Description

The ME60N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦8.5mΩ@VGS=10V.
  • RDS(ON)≦13mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME60N03-G
Manufacturer Matsuki
File Size 944.65 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ME60N03-G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ME60N03/ME60N03-G -g30V N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME60N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss. FEATURES ● RDS(ON)≦8.5mΩ@VGS=10V ● RDS(ON)≦13mΩ@VGS=4.
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