Datasheet Details
| Part number | ME80N08A |
|---|---|
| Manufacturer | Matsuki |
| File Size | 1.08 MB |
| Description | N-Channel MOSFET |
| Datasheet | ME80N08A-Matsuki.pdf |
|
|
| Part number | ME80N08A |
|---|---|
| Manufacturer | Matsuki |
| File Size | 1.08 MB |
| Description | N-Channel MOSFET |
| Datasheet | ME80N08A-Matsuki.pdf |
|
|
|
The ME80N08A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
| Part Number | Description |
|---|---|
| ME80N08A-G | N-Channel MOSFET |
| ME80N08AF | N-Channel MOSFET |
| ME80N08AF-G | N-Channel MOSFET |
| ME80N08AH | N-Channel MOSFET |
| ME80N08AH-G | N-Channel MOSFET |
| ME80N08 | N-Channel 80-V (D-S) MOSFET |
| ME80N08-G | N-Channel 80-V (D-S) MOSFET |
| ME80N75AF | N-Channel MOSFET |
| ME80N75AF-G | N-Channel MOSFET |
| ME80N75AT | N-Channel MOSFET |