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ME8205E-G Datasheet Dual N-channel MOSFET

Manufacturer: Matsuki

Overview: Dual N-Channel 20V (D-S) MOSFET GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ME8205E is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON)≦22mΩ@VGS=4.5V.
  • RDS(ON)≦23mΩ@VGS=4.0V.
  • RDS(ON)≦26mΩ@VGS=3.0V.
  • RDS(ON)≦29mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

More Datasheets from Matsuki

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ME8205E-G Distributor