900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Matsuki

ME9926-G Datasheet Preview

ME9926-G Datasheet

Dual N-Channel 20V (D-S) MOSFET

No Preview Available !

Dual N-Channel 20V (D-S) MOSFET
ME9926/ME9926-G
GENERAL DESCRIPTION
The ME9926 is the Dual N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where switching and low in-line power loss are needed in a very
small outline surface mount package.
FEATURES
RDS(ON)29m@VGS=4.5V
RDS(ON)≦42m@VGS=2.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
Load Switch
DSC
PIN CONFIGURATION
(SOP-8)
Top View
e Ordering Information: ME9926 (Pb-free)
ME9926-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
Pulsed Drain Current
Maximum Power Dissipation*
Operating Junction Temperature
TA=25
TA=70
TA=25
TA=70
Thermal Resistance-Junction to Ambient*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
10sec
SteadyState
20
±12
6.6 5.2
5.2 4.2
30
2.0 1.25
1.2 0.8
-55 to 150
Typ 45 Typ 80
Max 62.5 Max 100
e * The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
℃/W
Feb, 2009-Ver1.2
01




Matsuki

ME9926-G Datasheet Preview

ME9926-G Datasheet

Dual N-Channel 20V (D-S) MOSFET

No Preview Available !

Dual N-Channel 20V (D-S) MOSFET
ME9926/ME9926-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
VSD
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Diode Forward Voltage
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±12V
VDS=20V, VGS=0V
VGS=4.5V, ID= 6.0A
VGS=2.5V, ID= 5.2A
IS=1.7A, VGS=0V
20 V
0.4 0.9 V
±100 nA
1 μA
22 29
m
28 42
0.72 1.2
V
DYNAMIC
Qg Total Gate Charge
8
Qgs Gate-Source Charge
VDS=10V, VGS=4.5V, ID=6.0A
2.1
Qgd Gate-Drain Charge
2.3
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=10V,ID=1.0A, VGEN=4.5V
RG=6Ω
14
17
43
5
Ciss Input capacitance
550
Coss
Output Capacitance
VDS=15V, VGS=0V, f=1.0MHz
130
Crss
Reverse Transfer Capacitance
40
Notes: a. Pulse test: pulse width300us, duty cycle2%,Guaranteed by design, not subject to production testing.
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
nC
ns
pF
Feb, 2009-Ver1.2
02


Part Number ME9926-G
Description Dual N-Channel 20V (D-S) MOSFET
Maker Matsuki
Total Page 5 Pages
PDF Download

ME9926-G Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 ME9926-G Dual N-Channel 20V (D-S) MOSFET
Matsuki





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy