* 10.8±0.2 q High collector to base voltage VCBO q High collector to emitter VCEO q Allowing automatic insertion with radial taping 2.5±0.1 90° 0.65±0.1 0.85±0.1 1.0±0.1 0.8C 0.8C 0.7±0.1 0.7±0.1 / s Absolute Maximum Ratings (Ta=25˚C) e ) Parameter Symbol Ratings Unit 16.0±1.0 c type Col
2SC4986
Matsushita Electric Industrial
184.50 KB
Npn transistor.
Power Transistors 2SC4986 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 7.5±0.2 4.5±0.2 3.8±0.
📁 Related Datasheet
2SC498 Silicon NPN Transistor (ETC)
2SC4980 Switching Power Transistor (Shindengen Electric Mfg.Co.Ltd)
2SC4980 SILICON POWER TRANSISTOR (SavantIC)
2SC4980 NPN Transistor (INCHANGE)
2SC4981 Switching Power Transistor (Shindengen Electric Mfg.Co.Ltd)
2SC4981 SILICON POWER TRANSISTOR (SavantIC)
2SC4981 NPN Transistor (INCHANGE)
2SC4982 Switching Power Transistor (Shindengen Electric Mfg.Co.Ltd)
2SC4982 SILICON POWER TRANSISTOR (SavantIC)
2SC4982 NPN Transistor (INCHANGE)
