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MaxPower Semiconductor
MaxPower Semiconductor

MXP1008AT Datasheet Preview

MXP1008AT Datasheet

100V N-Channel MOSFET

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MXP1008AT pdf
100V N-Channel MOSFET
Applications:
Uninterruptible Power Supply
High Speed Power Switching
High Efficiency Synchronous Rectification in SMPS
Features:
Lead Free
Low RDS(ON) to Minimize Conductive Loss
Low Gate Charge for Fast Switching Application
Optimized V(BR)DSS Ruggedness
VDS
100V
MXP1008AT
RDS(ON)(MAX)
8mΩ
ID
115A
Ordering Information
Park Number
Package
MXP1008AT
TO220
Brand
MXP
TO220 Pin Definition and Inner Circuit
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS Drain-to-Source Voltage
100
ID Continuous Drain Current
Silicon Limited
Package Limited
115
80
IDM Pulsed Drain Current @VGS=10V
459
PD Power Dissipation
242
VGS Gate-to-Source Voltage
+/-20
TJ and Tstg Operating Junction and Storage Temperature Range
-55 to 175
Unit
V
A
W
V
Avalanche Characteristics
Symbol
Parameter
EAS
Single Pulse Avalanche Energy
(VDS=50V, VGS=10V, Rg=25, L=1mH)
IAS Single Pulse Avalanche Current
TC=25unless otherwise specified
Value
200
Figure 9
Unit
mJ
A
Thermal Resistance
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Max Unit
0.62 /W
62 /W
: Guarantee number.
©MaxPower Semiconductor Inc.
Page1
MXP1008AT Preliminary Jun. 2013



MaxPower Semiconductor
MaxPower Semiconductor

MXP1008AT Datasheet Preview

MXP1008AT Datasheet

100V N-Channel MOSFET

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MXP1008AT pdf
100V N-Channel MOSFET
MXP1008AT
OFF Characteristics
Symbol
Parameter
TJ=25unless otherwise specified
Min Typ Max Unit
V(BR)DSS Drain-to-Source Breakdown Voltage 100
-
-V
IDSS Drain-to-Source Leakage Current
-
-
-
-
1
100
uA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-
-
-
-
100
100
nA
Test Conditions
VGS=0V, ID=250uA
VDS=80V, VGS=0V
VDS=80V, VGS=0V, TJ=125
VGS=+20V
VGS= -20V
ON Characteristics
Symbol
Parameter
TJ=25unless otherwise specified
Min Typ Max Unit
RDS(ON) Static Drain-to-Source On-Resistance
-
6.3 8.0 m
VGS(th) Gate Threshold Voltage
2.5 - 4.5 V
Test Conditions
VGS=10V, ID=69A
VGS=VDS, ID=250uA
Dynamic Characteristics
Symbol
Parameter
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
TJ=25unless otherwise specified
Min Typ Max Unit
- 9315
-
- 536
- pF
- 204
-
- 110
-
- 40
- nC
- 31
-
- 51
-
- 130
- 107
-
-
ns
- 51
-
Test Conditions
VGS=0V, VDS=25V,
f=1.0MHz
VDD=50V, ID=69A, VGS=10V
VDD=50V, ID=35A, VGS=10V
RG=10, RL=1.4
Source-Drain Diode Characteristics
Symbol
Parameter
VSD Diode Forward Voltage
Trr Reverse Recovery Time
Qrr Reverse Recovery Charge
TJ=25unless otherwise specified
Min Typ Max Unit
- - 1.2 V
- 86.8
- ns
- 229.3 - nC
Test Conditions
IS=69A, VGS=0V
Is=69A, di/dt=100A/μs
Published by MaxPower Semiconductor Inc.
4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054
©MaxPower Semiconductor Inc.
Page2
All Rights Reserved.
MXP1008AT Preliminary Jun. 2013


Part Number MXP1008AT
Description 100V N-Channel MOSFET
Maker MaxPower Semiconductor
Total Page 7 Pages
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