900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






MaxPower Semiconductor

MXP4003CTS Datasheet Preview

MXP4003CTS Datasheet

40V N-Channel MOSFET

No Preview Available !

40V N-Channel MOSFET
MXP4003CTS Datasheet
Applications:
Power Supply
DC-DC Converters
Features:
Lead Free
Low RDS(ON) to Minimize Conductive Loss
Low Gate Change for Fast Switching Application
Optimized BVDSS Capability
Ordering Information
Part Number
Package
MXP4003CTS
TO220
Brand
MXP
VDSS
40 V
RDS(ON) (Max)
3.0 mΩ
IDa
260A
Absolute Maximum Ratings
Tc=25unless otherwise specified
Symbol
Parameter
Value
Units
VDS Drain-to-Source Voltage
IDa
Continuous Drain Current
(TC=25)
IDM Pulsed Drain Current @VG=10V
40
260
1040
V
A
Power Dissipation
PD Derating Factor above 25
300 W
2 W/
EAS Single Pulse Avalanche Energy (L=1mH)
1546
mJ
TJ and TSTG Operating Junction and Storage Temperature Range
-55 to 175
a. Calculated continuous current based upon maximum allowable junction temperature, +175. Package limitation current is 80A.
OFF Characteristics
TJ=25unless otherwise specified
Symbol
Parameter
BVDSS
Drain-to-Source Breakdown
Voltage
IDSS
Drain-to-Source Leakage
Current
Min
40
Typ Max Units
Test Conditions
V VGS=0V, ID=250µA
1 VDS=32V, VGS=0V
µA
100 VDS=32V, VGS=0V TJ=125
©MaxPower Semiconductor Inc.
1 MXP4003CTS Rev 1.0, Jan 2011




MaxPower Semiconductor

MXP4003CTS Datasheet Preview

MXP4003CTS Datasheet

40V N-Channel MOSFET

No Preview Available !

Gate-to-Source Forward
IGSS
Leakage
Gate-to-Source Reverse
Leakage
ON Characteristics
TJ=25unless otherwise specified
100 VGS=+20V
nA
100 VGS= -20V
Symbol
Parameter
Min Typ Max Units
Test Conditions
RDS(ON)
Static Drain-to-Source
On-Resistance
2.7 3 mΩ VGS= 10V, ID=24A
VGS(TH)
Gate Threshold Voltage 2
4 V VDS=VGS, ID=250µA
Dynamic Characteristics
Essentially independent of operating temperature
Symbol
Parameter
Min
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer
Capacitance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain (“Miller”)
Charge
td(on) Turn-on Delay Time
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Typ
6144
2378
660
71
24
35
18
160
42
61
Max Units
Test Conditions
pF VGS=0V, VDS=25V, f=1.0MHz
nC VDD=20V, ID=30A, VG=10V
ns VDD=20V, ID=63A, VG=10V,
RG=4.7Ω
Source-Drain Diode Characteristics
Tc=25unless otherwise specified
Symbol
Parameter
Min Typ Max Units
Test Conditions
VSD Diode Forward Voltage
1.2 V IS=24A, VGS=0V
Trr
Reverse Recovery Time
78 ns
Qrr
Reverse Recovery
Charge
IS=30A, di/dt = 100A/μs
148 nC
Thermal Resistance
Symbol
Parameter
RθJC Junction-to-Case
Min Typ Max Unit
Test Conditions
Water cooled heatsink, PD
- - 0.95 /W adjusted for a peak junction
Temperature of 175
©MaxPower Semiconductor Inc.
2 MXP4003CTS Rev 1.0, Jan 2011


Part Number MXP4003CTS
Description 40V N-Channel MOSFET
Maker MaxPower Semiconductor
PDF Download

MXP4003CTS Datasheet PDF






Similar Datasheet

1 MXP4003CTS 40V N-Channel MOSFET
MaxPower Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy