* Low capacitances and low gate charge
* Fast switching speed due to low internal gate resistance (ESR)
* Stable operation at high junction temperature, TJ(max) = 175 °C
* Fast and reliable body diode
* Superior avalanche ruggedness
* RoHS compliant Be
MSC017SMA120B Datasheet (3.76 MB)
MSC017SMA120B
3.76 MB
N-channel mosfet.
1200V, 17 mΩ N-Channel mSiC™ MOSFET MSC017SMA120B Product Overview 1200V, 17 mΩ typical at 20 VGS, 19 mΩ typical at 18 VGS, Silicon Carbide (SiC) N-Ch.
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