Datasheet Summary
3300 V, 90 A Silicon Carbide Schottky Barrier Diode
Product Overview
The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC090SDA330B2 device is a 3300 V, 90 A SiC SBD in a two-lead T-MAX package.
Features
The following are key Features of the MSC090SDA330B2 device:
- No reverse recovery
- Low forward voltage
- Low leakage current
- RoHS pliant
Benefits
The following are benefits of the MSC090SDA330B2 device:
- High switching frequency
- Low switching losses
- Low noise (EMI) switching
- Higher...