MSC180SMA120B Datasheet | Microchip Technology

Overview The silicon carbide (Si C) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC180SMA120B device is a 1200 V, 180 mΩ Si C MOSFET in a TO-247 package. Features The following are key features of the MSC180SMA120B device: - Low capacitances and low gate charge - Fast switching speed due to low internal gate resistance (ESR) - Stable operation at high junction temperature, TJ(max) = 175 °C - Fast and reliable body diode - Superior avalanche ruggedness - Ro HS pliant Benefits The following are benefits of the MSC180SMA120B device: - High efficiency to enable lighter, more pact system - Simple to drive and easy to parallel - Improved thermal capabilities and lower switching losses - Eliminates the need for external freewheeling diode - Lower system cost of ownership Applications The MSC180SMA120B device is designed for the following applications: - PV inverter, converter, and industrial motor drives - Smart grid transmission and distribution - Induction heating and welding - H/EV powertrain and EV charger - Power supply and distribution © 2021 Microchip Technology Inc. DS-00003858A-page 1 Device Specifications 1. Device Specifications This section shows the specifications of the MSC180SMA120B device. 1.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC180SMA120B device. Table 1-1. Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD Parameter Drain source voltage Continuous drain current at TC = 25 °C Continuous drain current at TC = 100 °C Pulsed drain current1 Gate-source voltage Total power dissipation at TC = 25 °C Linear derating factor Ratings 1200 21 15 40 23 to - 10 127 1.18 Unit V A V W W/°C Note:  1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature. The following table shows the thermal and...