* The following are key features of the MSC180SMA120B device:
* Low capacitances and low gate charge
* Fast switching speed due to low internal gate resistance (ESR)
* Stable operation at high junction temperature, TJ(max) = 175 °C
* Fast and reliable body diode
MSC180SMA120B Datasheet (6.31 MB)
MSC180SMA120B
6.31 MB
N-channel power mosfet.
MSC180SMA120B Silicon Carbide N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the.
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