Datasheet4U Logo Datasheet4U.com

MSC360SMA120S Datasheet N-channel Power MOSFET

Manufacturer: Microchip Technology

Overview: MSC360SMA120S 1200 V, 360 mΩ SiC N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC360SMA120S device is a 1200 V, 360 mΩ SiC MOSFET in a TO-268 (D3PAK) package.

Key Features

  • The following are key features of the MSC360SMA120S device:.
  • Low capacitances and low gate charge.
  • Fast switching speed due to low internal gate resistance (ESR).
  • Stable operation at high junction temperature, TJ(max) = 175 °C.
  • Fast and reliable body diode.
  • Superior avalanche ruggedness.
  • RoHS compliant Benefits The following are benefits of the MSC360SMA120S device:.
  • High efficiency to enable lighter, more compact system.
  • Si.

More Datasheets from Microchip Technology

Part Number Description
MSC360SMA120B Silicon Carbide N-Channel Power MOSFET
MSC010SDA070B Zero Recovery Silicon Carbide Schottky Diode
MSC010SDA070BCT 10A Silicon Carbide Schottky Dual Diode
MSC010SDA070K Zero Recovery Silicon Carbide Schottky Diode
MSC010SDA070S Zero Recovery Silicon Carbide Schottky Diode
MSC015SMA070B N-Channel MOSFET
MSC015SMA070B4 N-Channel MOSFET
MSC017SMA120B N-Channel MOSFET
MSC025SMA120B N-Channel MOSFET
MSC030SDA120B Schottky Diode

MSC360SMA120S Distributor