Datasheet Summary
3300 V, 400 mΩ SiC N-Channel Power MOSFET
Product Overview
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC400SMA330B4 device is a 3300 V, 400 mΩ SiC MOSFET in a TO-247 4-lead package with a source sense.
Features
The following are key Features of the MSC400SMA330B4 device:
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max) = 150 °C
- Fast and reliable body diode
- Superior avalanche ruggedness
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